National Repository of Grey Literature 1 records found  Search took 0.00 seconds. 
Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures
Nohavica, Dušan ; Grym, Jan ; Gladkov, Petar ; Hulicius, Eduard ; Pangrác, Jiří
We investigate the concept of epitaxial growth on porous substrates Both crystalographically oriented and current line oriented pore networks in InP and GaAs were created by electrochemical dissolution. Heat treatment of InP pores at 650 ºC and GaAs pores at 700-850ºC converted them into microcavities. The capability of improved structural quality homo- and hetero-epitaxially overgrown films is demonstrated on InAs and GaInAs layers with a different composition grown on porous GaAs substrates

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